Fully-scalable 2D THz radiating array: A 42-element source in 130-nm SiGe with 80-µW total radiated power at 1.01 THz

Zhi Hu, R. Han
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引用次数: 12

Abstract

This paper presents a 1-THz radiating array using IHP 130-nm SiGe process. It is based on a highly-scalable 2D structure that uses a square grid of slots to simultaneously (1) maximize and synchronize the fundamental oscillation (ƒ0=250 GHz) and 4th-harmonic generation (4ƒ0=1 THz) of a large array of transistors, (2) synthesize standing-wave patterns with near-field cancellation at ƒ0, 2ƒ0 and 3ƒ0 and efficient radiation at 4ƒ0. The compact design enables implementation of 42 coherent radiators on a 1-mm2 area. The chip consumes 1.1-W DC power and generates 80-µW total radiated power with 13-dBm EIRP.
完全可扩展的2D太赫兹辐射阵列:42个元件的130纳米SiGe源,总辐射功率为80 μ W,为1.01太赫兹
本文提出了一种采用IHP 130纳米SiGe工艺的1太赫兹辐射阵列。它基于高度可扩展的二维结构,使用方形网格槽来同时(1)最大化和同步大型晶体管阵列的基波振荡(ƒ0=250 GHz)和四次谐波产生(4ƒ0=1太赫兹),(2)合成在ƒ0, 2ƒ0和3ƒ0具有近场抵消的驻波模式和4ƒ0的有效辐射。紧凑的设计可以在1平方毫米的面积上实现42个相干散热器。该芯片的直流功耗为1.1 W,总辐射功率为80µW, EIRP为13dbm。
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