Fabrication and characterization of polyaniline based Schottky diode

Abstract

In this work polyaniline was chemically synthesized. Schottky diode was fabricated based on polyaniline as p-type semiconductor, gold as Ohmic contact and aluminum as Schottky contact. Coating of metals was carried out with physically vapour deposition method and coating of polymer was done with solvent casting method. Current-voltage (I-V) characteristics of diode were measured and current transport mechanism of diode was studied. I-V characteristics showed that Schottky diode based on pure polyaniline follows the thermionic emission mechanism. The electronic parameters of Schottky diode such as ideality factor, barrier height and reverse saturation current have been determined.