A multilevel analog storage memory using source-side injection flash array

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786031

Chun-Mai Liu, J. Brennan, P. Guo, P. Holzmann, P. Klinger, A.V. Kordesch, M. Kwan, I-Sheng Liu, K. Su, C. Wang, Hai Wang, Sukyoon Yoon

引用次数: 4

Abstract

A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode capabilities into the base digital flash process.

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一种采用源端注入闪存阵列的多级模拟存储存储器

开发了一种分辨率接近8位的多级存储技术，用于将模拟信号直接存储到源侧注入闪存EEPROM的存储阵列中。这是通过设计读取和编程方案、优化存储单元布局以及将混合模式功能集成到基本数字闪存进程中来实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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