Frequency opportunities of GaAs MDS-structures

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) Pub Date : 2000-09-11 DOI:10.1109/CRMICO.2000.1256168

N. I. Beletsky, A. Mishnyov, N. Polyansky, E. Prokhorov, A. Semenov

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Abstract

MDS-structures based on GaAs and carbon diamond-like films (CDLF) are experimentally investigated. Voltage-current and voltage-capacity characteristics are measured. The frequency band of such structures is calculated.

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GaAs mds结构的频率机会

实验研究了基于砷化镓和类碳金刚石薄膜(CDLF)的mds结构。测量了电压-电流和电压-容量特性。计算了这种结构的频带。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415)

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