New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior

Abstract

IGBT3 technology, with its trench cell and field stop is introduced for high voltage applications. The field stop concept has to be optimized, if modules with a high rated current are used in applications with a high stray inductance, to ensure the controllability of the voltage overshoot. The realized devices have greatly reduced losses in typical applications and allow an increase of the power output of converters.