A sub-2dB noise figure, 200–3700 MHz receiver for LTE-A applications

Mostafa Radwan, M. Hossam, M. Aboudina, F. Hussien
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引用次数: 2

Abstract

A wideband low-noise amplifier (LNA) with an inherent active-balun and a wideband Downconversion Mixer are proposed in this work. For the LNA, a combination of a common-gate (CG) stage and a common-source (CS) stage is used to acquire the differential output signal out of a single-ended input while still maintaining acceptable output balancing. A positive feedback loop is added to increase the degree of freedom in choosing the design parameters. This leads to decreasing the overall noise figure (NF) without affecting the input matching performance. The LNA shows a NF below 1.86dB, gain of 25.9dB, and IIP3 of -8dBm across all band (200-3700 MHz). A minimum NF of 1.75dB was achieved at 400-1500 MHz band. For the Mixer, A dual current bleeding technique is used to maintain the linear operation at high input amplitudes to achieve high linearity reaching a maximum IIP3 value of 9.66dBm. The Mixer shows a NF of 13dB and gain 6dB. The front-end is designed in 0.13μm standard CMOS process. A total minimum NF of 1.9dB was achieved with a gain of 31.9dB.
一个低于2db的噪声系数,200-3700 MHz的接收机,用于LTE-A应用
本文提出了一种内置有源平衡器和宽带下变频混频器的宽带低噪声放大器。对于LNA,共门级(CG)和共源级(CS)的组合用于从单端输入获取差分输出信号,同时仍然保持可接受的输出平衡。增加了一个正反馈回路,以增加选择设计参数的自由度。这样可以在不影响输入匹配性能的情况下降低总体噪声系数(NF)。LNA显示NF小于1.86dB,增益为25.9dB,整个频段(200-3700 MHz)的IIP3为-8dBm。在400-1500 MHz频段达到了1.75dB的最小NF。混合器采用双放流技术,在高输入幅值下保持线性运行,实现高线性度,最大IIP3值为9.66dBm。混频器显示NF为13dB,增益为6dB。前端采用0.13μm标准CMOS工艺设计。总最小NF为1.9dB,增益为31.9dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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