Fabrication and Optical High Speed Characterization of Phase-Shifted InGaAs/InP Multi Quantum Well DFB Structures

Abstract

We have fabricated 1st order phase shifted DFB-gratings for the 1.5 µm wavelength range on MOCVD grown InGaAs/InP-multi quantum well (MQW) layers. The dynamic properties were investigated by a new optical method which allows to test the high frequency behaviour of the devices far into the GHz range.