A silicon light emitting devices in standard CMOS technology

Abstract

A silicon light emitting device is designed and simulated. It is fabricated in 0.6 /spl mu/m standard CMOS technology. The device can give more than 1 /spl mu/W optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V. The external electrical-optical conversion efficiency is more than 10/sup -6/. The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.