The sputtered dielectric thin film layer and their properties

Abstract

The work is focused on investigation of properties of thin film layer in dependence on deposition process. Dielectric AlN thin film layers were prepared by using of aluminum target and reactive sputtering. The capacitance, dielectric loss and thickness of thin film capacitors were analyzed. The properties of thin film dielectric layer during sputtering are influenced by power of plasma generator, partial pressure of reactive gas in sputtering chamber and time of sputtering. Thickness of dielectric layer is evaluated by using confocal microscope.