Microstructure and phase state of a composite based on silicon carbide irradiated with krypton ions

8th International Congress on Energy Fluxes and Radiation Effects Pub Date : 2022-11-14 DOI:10.56761/efre2022.r4-p-052701

V. Uglov, V. Kholad, P. Grinchuk, M. Kiyashko, I. A. Ivanov, A. Kozlovskiy, M. Zdorovets

引用次数: 0

Abstract

Composite based on silicon carbide was irradiated with krypton ions with an energy of 280 keV fluence 1∙1013–5∙1015 cm-2. Irradiation leads to irradiation growth of the crystal lattice, as well as amorphization of the near-surface layer.

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氪离子辐照碳化硅基复合材料的微观结构和相态

用能量为280 keV的氪离子辐照碳化硅基复合材料，辐照量为1∙1013-5∙1015 cm-2。辐照导致了晶格的辐照生长，以及近表面层的非晶化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

8th International Congress on Energy Fluxes and Radiation Effects

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