Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate

Abstract

An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.