Optimization of structural and technological parameters of the field effect Hall sensor

2015 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2015-10-01 DOI:10.1109/ATC.2015.7388410

V. Volchek, I. Lovshenko, V. Stempitsky, Dao Dinh Ha, A. Belous, V. Saladukha

引用次数: 0

Abstract

The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.

查看原文本刊更多论文

场效应霍尔传感器结构和工艺参数的优化

给出了基于“绝缘体上硅”(SOI LSF)参数形成的MIS结构的磁敏元件场霍尔传感器的优化结果。利用Silvaco软件仿真结果确定了器件结构的主要特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2015 International Conference on Advanced Technologies for Communications (ATC)

自引率

0.00%

发文量