A CPU on a plastic film substrate

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345496

T. Takayama, Y. Ohno, Y. Goto, A. Machida, M. Fujita, J. Maruyama, K. Kato, J. Koyama, S. Yamazaki

引用次数: 23

Abstract

A CPU using a high performance poly-silicon TFT is successfully fabricated on a plastic film substrate by a TFT transfer technology onto a plastic film substrate we developed. No performance degradation by the transfer process was observed, and we confirmed the CPU operation at the frequency of more than 10MHz with a power source voltage 33V.

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塑料薄膜衬底上的CPU

通过在塑料薄膜衬底上采用TFT转移技术，成功地在塑料薄膜衬底上制备了高性能多晶硅TFT CPU。在传输过程中没有观察到性能下降，我们确认CPU在10MHz以上的频率下工作，电源电压为33V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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