A one-step technique in fabricating InGaAs-InGaAsP monolithic multiple-wavelength laser arrays

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551) Pub Date : 2001-09-30 DOI:10.1109/ECOC.2001.989691

H.S. Lim, Y. Lam, Y. Chan, B. Ooi, V. Aimez, J. Beauvais, J. Beerens

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Abstract

10-channel monolithic multiple-wavelength laser diodes were demonstrated using a one-step gray mask and reactive ion etching technique to create a graded-thickness SiO/sub 2/ implant mask, followed by low energy P/sup ++/ implantation for bandgap tuning.

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一步法制造InGaAs-InGaAsP单片多波长激光阵列

采用一步灰色掩模和反应离子刻蚀技术制备了梯度厚度SiO/ sub2 /植入掩模，然后采用低能量P/sup ++/植入进行带隙调谐。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)

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