A matched impedance NMOS amplifier

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157122

K.-y. Toh, R. Meyer, D. Soo, G. Chin, A. Voshchenkov

引用次数: 3

Abstract

Active shunt feedback and matched amplifiers yielding a 16.35dB gain block with input VSWR less than 2.5, and a 6.7dB noise figure will be discussed. A bandwidth of 758MHz has been achieved in a 1μm NMOS process.

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匹配阻抗NMOS放大器

有源并联反馈和匹配放大器将产生16.35dB增益块，输入驻波比小于2.5，噪声系数为6.7dB。在1μm的NMOS工艺中实现了758MHz的带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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