Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) Pub Date : 2019-10-01 DOI:10.1109/DFT.2019.8875475

Lucas Matana Luza, Alexandre Besser, V. Gupta, A. Javanainen, A. Mohammadzadeh, L. Dilillo

引用次数: 3

Abstract

Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

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重离子和质子辐照对SLC NAND闪存的影响

空间应用经常使用闪存来存储大量数据。然而，应用于存储阵列和外围电路的技术本身并不具有耐辐射性。本文介绍了在SLC NAND闪存上进行重离子和质子辐射试验的结果。静态测试显示了不同的故障类型。提出了单事件扰动和原始误差截面，以及对事件发生的评估。还进行了对嵌入式数据寄存器的影响的表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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