{"title":"A simple High Voltage MOSFET behavioural model for SABER Simulator","authors":"O. Luca","doi":"10.1109/SIITME53254.2021.9663678","DOIUrl":null,"url":null,"abstract":"A behavioral High Voltage MOSFET model was developed by the author as an alternative to the high complex models which requires a huge effort for parameters extraction and to the available limited MOSFET models with tolerances for the model parameters.","PeriodicalId":426485,"journal":{"name":"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIITME53254.2021.9663678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A behavioral High Voltage MOSFET model was developed by the author as an alternative to the high complex models which requires a huge effort for parameters extraction and to the available limited MOSFET models with tolerances for the model parameters.