Research and development of Ga-Sn-O thin films for application to neural networks

Abstract

Neural networks are information processing models based on the human brain, and they have been activity studied. However, in order to realize the hardware of the neural network, it is necessary to achieve high integration. In this study, we fabricated synapses for neural networks using the Ga-Sn-O (GTO) thin films, which is rare-metal-free amorphous oxide semiconductor. This synapse was a planar type and found to have degradation characteristics applicable to modified Hebb's learning rule. We used this result to deposit the GTO thin film on LSI surface. By considering the LSI as a neuron, it was possible to satisfy the relation between the synapse and the neuron, and as a result, a simple neural network could be constructed. Finally, we succeeded in character learning experiment using it