High Efficiency and Power Ion Implanted MESFET Devices

1994 24th European Microwave Conference Pub Date : 1994-10-01 DOI:10.1109/EUMA.1994.337366

E. Bastida, P. Antolini, A. Castelli, G. Donzelli, B. Gabbrielli, C. Longari, F. Rasa, L. Scopelliti

引用次数: 2

Abstract

The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.

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高效率和功率离子注入MESFET器件

本文描述了最近如何通过适当的新工艺特点生产出功率和效率惊人提高的功率场效应管器件。特别是功率附加效率达到高于标准文献关系预期的值。讨论了这一事实的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1994 24th European Microwave Conference

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