Enhanced Light Emission in Active Silicon-on-Insulator Photonic Crystal Slabs and Slot Waveguides

2007 9th International Conference on Transparent Optical Networks Pub Date : 2007-07-01 DOI:10.1109/ICTON.2007.4296125

D. Gerace, L. Andreani, M. Belotti, M. Galli, M. Liscidini, M. Patrini, A. Politi, A. Canino, A. Irrera, R. Lo Savio, M. Miritello, F. Priolo, Y. Chen

引用次数: 0

Abstract

We present experimental measurements on silicon-on-insulator (SOI) photonic crystal slabs with an active layer containing Er3+ ions-doped silicon nanoclusters (Si-nc), showing strong enhancement of 1.54 mum emission at room temperature. We provide a systematic theoretical analysis to interpret such results. In order to get further insight, we discuss experimental data on the guided luminescence of unpatterned SOI planar slot waveguides, which show enhanced light emission in transverse-magnetic (TM) modes over transverse-electric (TE) ones.

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有源绝缘体上硅光子晶体板和槽波导中的增强光发射

我们对含有Er3+离子掺杂硅纳米团簇(Si-nc)的有源层的绝缘体上硅(SOI)光子晶体板进行了实验测量，在室温下显示出1.54 μ m的强发射增强。我们提供了一个系统的理论分析来解释这些结果。为了得到进一步的认识，我们讨论了无图案SOI平面槽波导的导光实验数据，表明横向磁(TM)模式下的光发射比横向电(TE)模式下的光发射增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 9th International Conference on Transparent Optical Networks

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