56 Gb/s Si/GeSi Optical Modulator

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2018-07-29 DOI:10.1364/CLEOPR.2018.TH3C.2

L. Mastronardi, M. Banakar, A. Khokhar, N. Hattasan, T. Rutirawut, T. D. Bucio, K. Grabska, C. Littlejohns, Alexandre Bazin, G. Mashanovich, F. Gardes

引用次数: 0

Abstract

We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.

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56gb /s Si/GeSi光调制器

本文介绍了在800 nm SOI平台上开发的EAM调制器的实验测量结果，该调制器工作在1566 nm，动态ER为5.2 dB, 56 Gb/s, EO带宽为56 GHz，功耗为44 fJ/bit。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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