Contrast on Performances of Different Planar Pattern RFIC Spiral Inductors with Equal Perimeter

Abstract

Based on the typical model of spiral inductor on silicon(SIOS) for RF integrated circuit(RFIC), the inductors circuit parameters for different hollow planar structures with the same inner radius such as quadrilateral, octagonal and circular have been simulated and computed by using the Ansoft software HFSS. Numerical results are well coincident with those from theoretical analysis. Compared with those of the quadrilateral and octagonal ones with the same inner radius and equal perimeter, the maximum quality factor Q of the circular spiral inductor increases by 0.78 and 0.67 times, at the frequency corresponding to the maximum quality factor L of the circular spiral inductor increases by 31% and 11%, respectively, and the resonance frequency fRS of the circular spiral inductor decreases by 9.3% and 6.8%, respectively.