Tunneling mechanism of dielectric relaxation and conduction

Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics Pub Date : 1989-07-03 DOI:10.1109/ICSD.1989.69194

V. Veksler, E. F. Orlova

引用次数: 0

Abstract

The tunneling mechanism of dielectric relaxation and conduction is investigated in the framework of a one-dimensional potential barrier model with two minima. It is shown that, under specified conditions, the action of the relaxation quantum mechanism is displayed in electrets with light relaxators at low temperature.<>

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介电弛豫和传导的隧穿机制

在具有两个最小值的一维势垒模型的框架下，研究了介质弛豫和传导的隧穿机制。结果表明，在一定条件下，带光弛豫子的驻极体在低温下可以显示弛豫量子机制的作用

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics

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