Quantized Hall Resistance Measurements

1988 Conference on Precision Electromagnetic Measurements Pub Date : 1988-06-07 DOI:10.1109/CPEM.1988.671305

S. Kawaji, N. Nagashima, N. Kikuchi, J. Wakabayashi, K. Inagaki, J. Kinoshita, K. Yoshihiro, C. Yamanouchi

引用次数: 22

Abstract

The quantized Hall resistances, R/sub H/(4), of Si MOSFETs were measured at approximately=0.5 K in a magnetic field of 15 T. The value of R/sub H/(4) was determined in terms of the Commonwealth Scientific and Industrial Research Organization (CSIRO) realization of the SI ohm. A weighted mean of three determinations gave a value for the quantity R/sub H/(4) of (6453.203,36(52)) Omega /sub SI-NML/ which can also be expressed as 6453.2(1.000,000,52(8)) Omega /sub SI-NML/. This R/sub H/(4) value gives a value for h/e/sup 2/ which is about 0.3 p.p.m. larger than the value for h/e/sup 2/ derived from the anomalous moment of the electron, using the quantum electrodynamics (QED) theory. >

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量子化霍尔电阻测量

在约=0.5 K条件下，在15 t的磁场下测量了Si mosfet的量化霍尔电阻R/sub H/(4)， R/sub H/(4)的值是根据联邦科学与工业研究组织(CSIRO)实现的Si欧姆来确定的。三次测定的加权平均值得出R/sub H/(4)的值为(6453.203,36(52))Omega /sub SI-NML/，也可以表示为6453.2(1,000,000,52(8))Omega /sub SI-NML/。这个R/sub H/(4)值给出了H/ e/sup 2/的值，它比使用量子电动力学(QED)理论从电子的异常力矩得到的H/ e/sup 2/的值大约大0.3 p.p.m.。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1988 Conference on Precision Electromagnetic Measurements

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