Simulating Wide Bandgap FET Models in LTspice

Abstract

Proper usage of FET models in simulation saves time and effort in developing power converters. This paper presents how gallium nitride or silicon carbide (SiC) FET models provided by their manufacturers are verified and utilized in LTspice XVII simulation. The simulation and experimental results of a double pulse test circuit using SiC FETs are compared to prove the preciseness and feasibility of the simulation.