Measurement And Tridimensional Simulation Of Silicon Pixel Detector Capacitance

L. Bosisio, F. Forti, E. Tomacruz
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引用次数: 3

Abstract

We report on a study of the capacitance of silicon pixel detectors to be used as tracking devices for high energy physics experiments. The pixel capacitance matrix plays an important role in system design issues, such as preamplifier matching and cross-talk among pixels. Test results on 100 x 100 pm2 pixels are compared with data obtained from a massively parallel tridimensional simulation code which is necessary to account for the intrinsically 3D nature of the pixel structure.
硅像素检测器电容的测量与三维仿真
本文报道了用于高能物理实验跟踪装置的硅像素探测器的电容研究。像素电容矩阵在前置放大器匹配和像素间串扰等系统设计问题中起着重要的作用。将100 x 100 pm2像素上的测试结果与从大规模并行三维模拟代码获得的数据进行比较,这对于考虑像素结构的内在3D性质是必要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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