Fabrication and estimation of characteristics for Nb-silicide FEAs

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291) Pub Date : 1999-03-18 DOI:10.1109/ASID.1999.762711

Jae Seok Park, Sanjo Lee, B. Ju, Jin Jang, D. Jeon, M. Oh

引用次数: 1

Abstract

Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have been improved by silicide formation on silicon using Nb. The formation of Nb-silicide was confirmed by X-Ray diffraction data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V and the emission current fluctuation was decreased from 5% to 2%.

查看原文本刊更多论文

铌硅化物有限元分析的制备及特性估计

利用铌在硅上形成硅化物，提高了硅尖场发射阵列(FEAs)的电子发射电流和稳定性。x射线衍射数据证实了铌硅化物的形成。硅尖FEAs的导通电压从64 V降低到47 V，发射电流波动从5%降低到2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of 5th Asian Symposium on Information Display. ASID '99 (IEEE Cat. No.99EX291)

自引率

0.00%

发文量