{"title":"Silicon electrochemistry related to the formation of porous silicon","authors":"M. Kelly, T. Guilinger, S. S. Tsao","doi":"10.1109/SOI.1988.95393","DOIUrl":null,"url":null,"abstract":"The authors have examined in detail the electrochemistry of both n- and p-type single-crystal","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"683 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The authors have examined in detail the electrochemistry of both n- and p-type single-crystal
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
