{"title":"Impact of Error Correction Code and Dynamic Memory Reconfiguration on High-Reliability/Low-Cost Server Memory","authors":"Charles Slayman, Manny Ma, Scott Lindley","doi":"10.1109/IRWS.2006.305243","DOIUrl":null,"url":null,"abstract":"History has shown that DRAM technology shrinks as the server memory density grows and, at the same time, user expectation of system uptime increases. Given this, new mitigation techniques are required to reduce the impact of DRAM faults on server reliability, availability, and serviceability (RAS). This study shows the trade-offs in the effectiveness of two commonly used error correction codes (ECC) and two dynamic memory reconfiguration (DMR) schemes with various types of anticipated memory failures. This study proposes a \"RAS intelligent\" way to look at device reliability as DRAM technology scales below 100nm","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
History has shown that DRAM technology shrinks as the server memory density grows and, at the same time, user expectation of system uptime increases. Given this, new mitigation techniques are required to reduce the impact of DRAM faults on server reliability, availability, and serviceability (RAS). This study shows the trade-offs in the effectiveness of two commonly used error correction codes (ECC) and two dynamic memory reconfiguration (DMR) schemes with various types of anticipated memory failures. This study proposes a "RAS intelligent" way to look at device reliability as DRAM technology scales below 100nm