Trench gate power MOSFETs with retrograde body profile

B. Tsui, Ming-da Wu, T. Gan, Hui-Hua Chou, Zhi-Liang Wu, C. Sune
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引用次数: 3

Abstract

Low specific on-resistance (R/sub ds,on/) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration is located close to the drain side, the depletion width at the drain side is suppressed, so that the channel length can be shortened greatly without sacrificing punch-through voltage. A low thermal budget and easy trench gate process are additional benefits. A power MOSFET with channel length of 0.4 /spl mu/m, threshold voltage of 1 V, and breakdown voltage of 32 V is demonstrated. Compared with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.
具有逆行体型的沟槽栅极功率mosfet
低比导通电阻(R/sub /,on/)和低栅极电容对于沟槽栅极功率mosfet至关重要。在这项工作中,我们提出了一种简单的逆行体廓形方法来同时改善这两个参数。逆行体MOSFET (RBMOS)是通过高能注入实现的。由于通道浓度最高的位置靠近漏极侧,因此可以抑制漏极侧的耗尽宽度,从而在不牺牲穿通电压的情况下大大缩短通道长度。低热预算和简单的槽门工艺是额外的好处。演示了一种通道长度为0.4 /spl mu/m,阈值电压为1v,击穿电压为32v的功率MOSFET。与传统器件相比,比导通电阻和品质因数分别提高了38%和70%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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