The simulation of the time characteristics of the photoresistive structures based on the cadmium lead sulfides

THE EUROPEAN MODELING AND SIMULATION SYMPOSIUM Pub Date : 2019-09-01 DOI:10.46354/i3m.2019.emss.007

I. Miroshnikova, B. N. Miroshnikov, E. Zenova, M.Y. Presnjakov, A. A. Makarov

引用次数: 0

Abstract

The structures of the lead sulphide and lead selenide based photoresistors are examined. The simulation allowed us to explain the experimentally observed differences in the photoconductivity relaxation time between two different types of photoresistors.

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基于硫化镉铅的光敏结构的时间特性模拟

研究了硫化铅和硒化铅基光敏电阻的结构。模拟使我们能够解释实验观察到的两种不同类型的光敏电阻在光导弛豫时间上的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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THE EUROPEAN MODELING AND SIMULATION SYMPOSIUM

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