Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI:10.1109/IWJT.2013.6644511

M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro

引用次数: 1

Abstract

Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.

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微波和RTA退火的phop掺杂，应变Si(100)和(110)注入分子碳离子

比较了在≈500℃下微波(MWA)和600 ~ 1000℃下快速退火对掺杂磷的应变Si(100)和注入分子碳(C7H7)离子的Si(110)的影响。p掺杂、C7植入的MWA应变nMOS S/D型结的取代碳含量达到1.44%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 13th International Workshop on Junction Technology (IWJT)

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