Fabrication and investigation of graphite/p-InP Schottky-type heterojunction

Abstract

Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV