Harmonic power generation from the non-linear output capacitance of silicon LDMOS devices

Abstract

Compression and harmonic generation mechanisms coupled to the non-linear output drift-region capacitance of Silicon LDMOS FET transistors are thoroughly investigated. Large-signal time-domain analysis is performed on the device operated as a class AB amplifier. Observations confirm significant real power being shifted from the fundamental to the even order harmonics by the capacitive element acting effectively as a varactor diode multiplier.