Study of carbon nanotube pillar arrays' edge effect on field emission characteristics

C. Juan, Jun-Han Lin
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Abstract

Effect of carbon nanotube pillar arrays' edge effect on field emission characteristics is first studied. The ratio of field emission current density at 5.733V/µm is about 55∶ 6.5∶ 1 which is nearly proportional to the edge ratio (50∶5∶1) for small, middle, and large sizes of CNTs' arrays. Besides, ultra low turn-on field (∼1.4 V/µm), well emission image uniformity and stability of about ±6.52 % at 650V were also achieved.
碳纳米管柱阵列边缘效应对场发射特性的影响研究
首先研究了碳纳米管柱阵列的边缘效应对场发射特性的影响。在5.733V/µm处,场发射电流密度之比约为55∶6.5∶1,与小、中、大尺寸CNTs阵列的边比(50∶5∶1)基本成正比。此外,还实现了超低导通场(~ 1.4 V/µm)、良好的发射图像均匀性和650V下约±6.52%的稳定性。
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