A Novel Segmented Temperature Monitor for Adaptive MRAM

Abstract

The influence of temperature change on device directly affects the memory performance, especially in access latency and energy consumption. Based on temperature monitor, temperature adaptive magnetic random access memory (MRAM) eliminates the impact of temperature on storage performance. However, limited by the characteristics of the magnetic tunnel junction (MTJ) device and the operating mode of the MRAM array, wider operating temperature brings challenges to the design of monitor. In this work, based on MRAM array, using the method of segmented detection, we propose a novel temperature monitor for monitoring temperature under -55~125°C. Simulation results show that the temperature monitor can detect the temperature with an accuracy of 5°C within 1.2μs.