Methods to design ternary gates and adders

Y. Shrivastava, T. Gupta
{"title":"Methods to design ternary gates and adders","authors":"Y. Shrivastava, T. Gupta","doi":"10.1049/pbcs073g_ch14","DOIUrl":null,"url":null,"abstract":"This chapter contains various designs of ternary logic gates and adders using complementary metal oxide semiconductor transistors (CMOS) and carbon nanotube field effect transistors (CNTFETs). As the time goes by binary logic is getting harder to implement on smaller scale, so ternary logic becomes a better alternative of the same. Ternary logic has the simplicity over binary logic and it is energy efficient also. In today's world when it's a challenge to implement the circuit design on as small level as possible, binary logic is limited due to large number of interconnects and large chip area, which is reduced in ternary logic. In ternary logic, there is a requirement of the multithreshold transistors, which can switch on and switch off on the particular voltage level when the circuit demands, since CNTFET's threshold can be changed by varying their chirality or tube diameter they have become the most suitable devices to implement ternary logic. In this chapter various research works on ternary gates and adders will be discussed and a comparison between them will be made on various performance parameters such as power delay product (PDP), transistor count and time delay. These parameters are evaluated and compared by simulating these circuits.","PeriodicalId":417544,"journal":{"name":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","volume":"256 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs073g_ch14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This chapter contains various designs of ternary logic gates and adders using complementary metal oxide semiconductor transistors (CMOS) and carbon nanotube field effect transistors (CNTFETs). As the time goes by binary logic is getting harder to implement on smaller scale, so ternary logic becomes a better alternative of the same. Ternary logic has the simplicity over binary logic and it is energy efficient also. In today's world when it's a challenge to implement the circuit design on as small level as possible, binary logic is limited due to large number of interconnects and large chip area, which is reduced in ternary logic. In ternary logic, there is a requirement of the multithreshold transistors, which can switch on and switch off on the particular voltage level when the circuit demands, since CNTFET's threshold can be changed by varying their chirality or tube diameter they have become the most suitable devices to implement ternary logic. In this chapter various research works on ternary gates and adders will be discussed and a comparison between them will be made on various performance parameters such as power delay product (PDP), transistor count and time delay. These parameters are evaluated and compared by simulating these circuits.
三元门和加法器的设计方法
本章包含使用互补金属氧化物半导体晶体管(CMOS)和碳纳米管场效应晶体管(cntfet)的各种三元逻辑门和加法器的设计。随着时间的推移,二进制逻辑越来越难以在较小的规模上实现,因此三元逻辑成为更好的选择。三元逻辑比二元逻辑更简单,也更节能。在当今世界,在尽可能小的层面上实现电路设计是一个挑战,二进制逻辑由于大量的互连和大的芯片面积而受到限制,而三元逻辑则减少了这一点。在三元逻辑中,有一个多阈值晶体管的要求,当电路需要时,它可以在特定的电压水平上接通和关闭,因为CNTFET的阈值可以通过改变它们的手性或管径来改变,它们已经成为实现三元逻辑的最合适的器件。在本章中,将讨论各种关于三元门和加法器的研究工作,并对它们之间的各种性能参数进行比较,如功率延迟积(PDP),晶体管计数和时间延迟。通过对这些电路的仿真,对这些参数进行了评估和比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信