Far-Infrared Two-Photon Transitions in n-GaAs

1981 International Conference on Submillimeter Waves and Their Applications Pub Date : 1981-12-01 DOI:10.1109/ICSWA.1981.9335172

W. Böhm, E. Ettlinger, W. Prettl

引用次数: 0

Abstract

Two-photon transitions in the far-infrared spectral range have been observed for the first time. The photoconductivity of n-GaAs as a function of the applied magnetic field exhibited two-photon transitions between 1s and 2s shallow donor states and two-photon cyclotron resonance. The experimental results indicate that two-photon cyclotron resonance is caused by impurities.

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n-GaAs中的远红外双光子跃迁

首次在远红外光谱范围内观测到双光子跃迁。n-GaAs的光电导率随外加磁场的变化表现为1s和2s浅层供体态之间的双光子跃迁和双光子回旋共振。实验结果表明，双光子回旋共振是由杂质引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1981 International Conference on Submillimeter Waves and Their Applications

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