Zero-bias-voltage modulation of narrow-beam-divergence tapered-thickness waveguide lasers with semi-insulating blocking layer

Abstract

We demonstrated zero-bias-voltage modulation of narrow-beam-divergence laser diodes by the reduction of the parasitic capacitance using semi-insulating blocking layer. A laser with low threshold current of 10.5 mA enabled 622 Mbit/s modulation under zero-bias-voltage condition even at 85/spl deg/C.