LC-Oscillator featuring independent gate biasing implemented in 32 nm CMOS technology

Abstract

This paper analyzes the potentials and the limitations of a novel LC-Oscillator topology featuring independent gate biasing. The topic is addressed from an experimental perspective. The novel topology has been implemented in a state-of-the-art 32 nm CMOS technology and used as a proof-of-concept. The performance of the oscillator has been evaluated in terms of power consumption and phase-noise. The independent gate biasing helps in relaxing the noise/power trade-off that limits the performance of conventional LC-Oscillators.