Investigation of high-speed modulaiton of 1.3μm InAs/InGaAs quantum dot VCSELs

Abstract

The influence of quantum dot (QD) density, uniformity and layer number on the 3dB bandwidth of 1.3μm InAs-InGaAs QD VCSELs is investigated by the small signal analysis of all-pathway rate equations. The dependence of bandwidth on the QD density is shown. Linearly dependence of bandwidth on the QD uniformity is demonstrated. High speed operation (> 10GHz) of QD VCSEL emitting at 1.3μm is predicated.