Development of Photoelectric Conversion Transistor Consisting of High-power LED and Si Solar Cell

Abstract

The bipolar transistor was invented in 1948 by W. Shockley at Bell Laboratories in the United States. Since then, the transistor has advanced along with the progress of integrated circuit technology, leading to today's advanced information society. Surprisingly, however, the bipolar transistor itself has not shown any significant technological progress. In this paper, we introduce the recently invented "Distar", a revolutionary transistor consisting of only LED and Si solar cell.