Structural characterization of methylsilsesquioxane-based porous low-k thin films using X-ray porosimetry

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219725

H. Lee, C. Soles, D. Liu, B. Bauer, E. Lin, W. Wu

引用次数: 1

Abstract

Methylsilsesquioxane based porous low-k dielectric films with different porogen loading have been characterized using X-ray porosimetry to determine their pore size distribution, average density, wall density and porosity. By varying the porogen content from 1 % to 30 %, the porosity and the average pore size changed from 12 % to 34 % and from 10 /spl Aring/ to 15 /spl Aring/ in radius, respectively. The wall density was found to be independent of the porogen content and it appeared that the porogen is not 100% effective in generating pores. Pore size of these samples was also obtained from small angle neutron scattering measurements and the results were found to be consistent with that from XRP.

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基于甲基硅氧烷的多孔低钾薄膜的x射线孔隙度表征

采用x射线孔隙率法对不同含孔率的甲基硅氧烷基多孔低k介电膜进行了表征，测定了其孔径分布、平均密度、壁密度和孔隙率。孔隙素含量在1% ~ 30%范围内变化，孔隙度和平均孔径半径分别从12% ~ 34%和10 /spl Aring/ ~ 15 /spl Aring/。壁密度与孔隙素含量无关，孔隙素并不是100%有效地形成孔隙。用小角中子散射法测定了样品的孔径，结果与XRP法一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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