Flexible low-voltage organic thin-film transistors with low contact resistance and high transit frequencies

James W. Borchert, U. Zschieschang, F. Letzkus, M. Giorgio, M. Caironi, J. Burghartz, S. Ludwigs, H. Klauk
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引用次数: 1

Abstract

Organic thin-film transistors are interesting candidates for the realization of low-power displays and other electronics on unconventional and flexible substrates. However, the adoption of organic TFTs in these applications has yet to be realized primarily due to high contact resistance. Here, we present a method for fabricating flexible organic TFTs with contact resistance as low as 29 Ωcm, a record for organic TFTs. In addition, these TFTs show other remarkable or record characteristics such as high on/off current ratio (as high as 1010), low subthreshold swing (as small as 59 mV/decade at 292 K), small stage delay (79 ns measured in an 11-stage ring oscillator) and high transit frequency (as high as 21 MHz). These results were obtained in ambient measurement conditions at low voltages of around 3 V.
具有低接触电阻和高传输频率的柔性低压有机薄膜晶体管
有机薄膜晶体管是在非常规和柔性衬底上实现低功耗显示器和其他电子产品的有趣候选者。然而,由于高接触电阻,在这些应用中采用有机tft尚未实现。在这里,我们提出了一种制造柔性有机tft的方法,其接触电阻低至29 Ωcm,这是有机tft的记录。此外,这些tft还显示出其他显著或创纪录的特性,如高开/关电流比(高达1010),低亚阈值摆幅(在292 K时小至59 mV/ 10),小级延迟(在11级环形振荡器中测量79 ns)和高传输频率(高达21 MHz)。这些结果是在低电压约3v的环境测量条件下获得的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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