Fully Analytical Compact Model of OxRAM Based on Joule Heating and Electromigration for DC and Pulsed Operation

Abstract

A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The model results are compared to experimental data and to a numerical model containing the same physical basis.