An 11b 1GS/s ADC with parallel sampling architecture to enhance SNDR for multi-carrier signals

Y. Lin, K. Doris, E. Janssen, A. Zanikopoulos, A. Murroni, G. V. D. Weide, H. Hegt, A. Roermund
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引用次数: 7

Abstract

This paper presents an 11b 1GS/s ADC with a parallel sampling architecture to enhance SNDR for broadband multi-carrier signals. It contains two 1GS/s 11b sub-ADCs each achieving > 54dB SNDR for input frequencies up to Nyquist frequency and state-of-the-art linearity performance. The SNDR of the ADC with the parallel sampling architecture is improved by 5dB compared to its sub-ADCs when digitizing multi-carrier signals with large crest factors. This improvement is achieved at less than half the cost in power and area compared to the conventional approach. The chip is implemented in 65nm LP CMOS and consumes in total 350mW at 1GS/s.
采用并行采样结构的11b 1GS/s ADC,可提高多载波信号的SNDR
为了提高宽带多载波信号的SNDR,提出了一种采用并行采样结构的11b 1GS/s ADC。它包含两个1GS/s 11b子adc,每个子adc的输入频率最高可达奈奎斯特频率,SNDR > 54dB,线性性能一流。采用并行采样结构的ADC在对波峰系数较大的多载波信号进行数字化处理时,其SNDR比其子ADC提高了5dB。与传统方法相比,这种改进在功率和面积上的成本不到一半。该芯片采用65nm LP CMOS实现,在1GS/s时总功耗为350mW。
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