Limits to Normal Incidence Electroabsorption Modulation in GaInAs/InP Multiple Quantum Well Diodes

Abstract

We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.