1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM) Pub Date : 2010-02-25 DOI:10.1109/PHOTWTM.2010.5421971

Z. Zhao, A. Schwagmann, F. Ospald, K. Klitzing, J. Smet, D. Driscoll, M. Hanson, Hong Lu, A. Gossard

引用次数: 0

Abstract

ErAs:In0.53Ga0.47As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 µm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.

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基于ErAs:In0.53Ga0.47As超晶格的1.55 μm光导太赫兹发射器

制备了ErAs:In0.53Ga0.47As超晶格太赫兹发射体，激发波长为1.55µm。讨论了光电压特性、载流子寿命和太赫兹输出带宽作为超晶格周期的函数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 IEEE Photonics Society Winter Topicals Meeting Series (WTM)

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