Advanced MOSFET modeling - Session 2

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Pub Date : 1900-01-01 DOI:10.1109/cicc.2004.1358716

C. McAndrew

引用次数: 0

Abstract

RF and mixed-signal design depends on the availability of accurate and realistic device models. The relentless advance in speed and performance of CMOS technologies has opened up new product areas for CMOS, such as RF, but the most widely used MOSFET models have not kept pace with this advance. This session contains four papers that report developments in areas of MOSFET modeling that are critical for modern technologies and application areas.

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高级MOSFET建模-第2节

射频和混合信号设计依赖于精确和真实的器件模型的可用性。CMOS技术在速度和性能方面的不断进步为CMOS开辟了新的产品领域，如射频，但最广泛使用的MOSFET模型并没有跟上这一进步的步伐。本次会议包含四篇论文，报告了对现代技术和应用领域至关重要的MOSFET建模领域的发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)

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