The effects of preparation conditions of SIMOX samples on the photoluminescence spectra of their buried oxide layer

Abstract

The purpose of this work was to study the effects of oxygen implant conditions and post-implant processes on the photoluminescence (PL) behavior of the BOX layer of SIMOX structures. The effect of heat treatment of pseudo-SIMOX structures (top Si layer removed) is also reported; this point is relevant to the defect structure of BOX layers. An important aspect of this work is that the samples used in this work have been extensively studied by various electrical and other techniques so that the PL spectra could be correlated with the results of those studies.